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The UNR511600L is a Silicon PNP epitaxial planar transistor with an integrated bias resistor, designed for digital circuits. It features a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device incorporates a built-in base resistor (R1) of 4.7 kΩ and operates within a junction temperature range of -55 to +150 °C. Packaged in the S-Mini3-G1 (SC-70) format, it supports automatic insertion via tape/magazine packing.
Verify the specific suffix '00L' against the manufacturer's official documentation to confirm packaging details and lifecycle status. Confirm RoHS compliance requirements and check for any maintenance or discontinuation notices on the Panasonic semiconductor website before finalizing procurement plans.
Select this component when a pre-biased PNP transistor is required for digital switching. Ensure the 4.7 kΩ internal resistance aligns with the circuit drive requirements. Verify that the SC-70 footprint matches the PCB layout constraints and that the -50 V rating accommodates the system voltage levels.
This part belongs to the UNR511x Series, which offers various combinations of transistors and resistors. The UNR5116 variant specifically pairs the PNP transistor with a 4.7 kΩ base resistor. The series is engineered for cost reduction through downsizing and simplified assembly in digital circuit designs.
Consult the official datasheet for equivalent part numbers within the UNR511x family. Verify pinout compatibility and electrical characteristics before substituting with other manufacturers' pre-biased transistors.
The UNR5116 includes a built-in base resistor (R1) with a nominal value of 4.7 kΩ.
The absolute maximum rating for the collector current (IC) is -100 mA at an ambient temperature of 25°C.
No, the UNR5116 configuration includes only a base resistor (R1). Other variants in the series may include both base and emitter resistors.