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The UNR511800L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an S-Mini3-G1 package and supports surface mount installation. Key electrical ratings include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 150 mW at 25°C. The device incorporates a base resistor (R1) of 0.51 kΩ and an emitter resistor (R2) of 5.1 kΩ. It exhibits a transition frequency of 80 MHz and a forward current transfer ratio (hFE) of 20 under standard test conditions.
Verify the exact suffix against official Panasonic Industry documentation to confirm resistance values and binning. Confirm lifecycle status as maintenance or discontinued before finalizing procurement plans. Ensure compatibility with RoHS Directive requirements for your specific manufacturing region.
Select this component when a compact PNP transistor with integrated biasing is required for space-constrained digital designs. Verify that the 0.51 kΩ base and 5.1 kΩ emitter resistor values align with your circuit's drive requirements. Consider the 150 mW power dissipation limit when designing thermal management strategies.
This part belongs to the UNR511x Series, which offers various combinations of internal resistors for different switching speeds and drive currents. The series is manufactured by Panasonic Industry using silicon epitaxial planar technology. It is distinct from other series like UNR911 or UNR5115 due to its specific resistor configuration and package type.
Consult official Panasonic cross-reference guides for verified substitutes. Generic equivalents may not match the precise internal resistor tolerances or hFE binning specified in the datasheet.
The UNR511800L includes a base resistor (R1) of 0.51 kΩ and an emitter resistor (R2) of 5.1 kΩ.
No, it is specifically designed for digital circuits and switching applications, with a transition frequency of 80 MHz.
The absolute maximum collector current (IC) is rated at -100 mA at an ambient temperature of 25°C.