UNR5119G0L

UNR5119G0L

$0.20
  • Description:TRANS PREBIAS PNP 50V SMINI3
  • Series:-

SKU:de61580adb5a Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:80 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-85
  • Supplier Device Package:SMini3-F2

Download product information

UNR5119G0L

Overview

The UNR5119G0L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Absolute maximum ratings at Ta = 25°C include a collector-base voltage (V_CBO) of -50 V, collector-emitter voltage (V_CEO) of -50 V, collector current (I_C) of -100 mA, total power dissipation (P_T) of 150 mW, junction temperature (T_j) of 150 °C, and storage temperature range from -55 to +150 °C.

Feature Summary

  • Integrates two internal bias resistors to reduce component count and equipment size.
  • Utilizes the SMini3-F2 surface-mount package for automated tape/magazine insertion.

Applications

  • Digital logic circuit interfacing
  • Switching applications in compact electronic devices

Procurement Notes

Verify the exact manufacturer part number against official Panasonic Industry documentation before procurement. Confirm that the specific suffix matches the required resistance values and electrical characteristics. Check the latest product lifecycle status directly on the manufacturer's website, as this series may be subject to maintenance or discontinuation phases.

Selection Notes

Select the UNR5119G0L when a PNP pre-biased transistor with a 1 kΩ base resistor (R1) and a 10 kΩ emitter resistor (R2) is required. Ensure the application operates within the specified -50 V voltage limits and -100 mA current constraints. Verify that the SMini3-F2 package dimensions are compatible with the target PCB layout and automated assembly processes.

Part Context

This component belongs to the UNR511xG Series, which consists of various PNP transistors with built-in resistors differentiated by their internal resistance ratios. The UNR5119G0L specifically provides a 1:10 ratio between its base and emitter resistors. This series is engineered for cost reduction through downsizing and simplified circuit design in digital electronics.

Replacement Considerations

Publicly confirmed substitute part numbers for the UNR5119G0L were not found in the provided source material. Cross-referencing with other models in the UNR511xG series or consulting the manufacturer's official replacement guide is recommended.

FAQ

What are the internal resistance values for the UNR5119G0L?

The UNR5119G0L contains a base resistor (R1) of 1 kΩ and an emitter resistor (R2) of 10 kΩ.

What is the pin configuration of the SMini3-F2 package?

Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.

What is the maximum collector current rating?

The absolute maximum collector current (I_C) is rated at -100 mA at an ambient temperature of 25°C.

UNR5119G0LUNR5119G0L
$0.20
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