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The UNR511D00L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an S-Mini3-G1 package (EIAJ SC-70) with three terminals: Base, Emitter, and Collector. The device supports a maximum collector current of -100 mA and a collector-emitter voltage of -50 V. Internal resistance values are R1 = 47 kΩ and R2 = 10 kΩ. Key electrical characteristics include a minimum forward current transfer ratio (hFE) of 30 at IC = -5 mA and VCE = -10 V, and a transition frequency (fT) of 80 MHz.
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Select this component when a PNP transistor with integrated biasing is required for space-constrained digital designs. Ensure the internal resistor values (47k/10k) align with the circuit's drive requirements. Verify that the -50V voltage rating and -100mA current capacity meet the system's operational limits.
This part belongs to the UNR511x Series, which offers various combinations of built-in resistors for different logic levels and drive strengths. All members share the same physical footprint and general electrical ratings, differing primarily in their internal resistance ratios and hFE rankings.
Direct substitutes within the UNR511x series include UNR511D (marking 6M). Other series members like UNR5111 or UNR5113 may function but require verification of internal resistance values and hFE specifications to ensure circuit compatibility.
The UNR511D contains a base resistor (R1) of 47 kΩ and an emitter resistor (R2) of 10 kΩ.
The marking symbol for the UNR511D is 6M.
The transition frequency is specified as 80 MHz under conditions of VCB = -10 V, IE = 1 mA, and f = 200 MHz.