UNR511E00L

Overview

The UNR511E00L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter voltage (VCEO) of -50 V and a maximum collector current (IC) of -100 mA. The device incorporates two internal bias resistors: R1 is 47 kΩ and R2 is 22 kΩ. The forward current transfer ratio (hFE) ranges from 60 to 200 at IC = -5 mA and VCE = -10 V. Total power dissipation is rated at 150 mW. The component utilizes an SMini3-G1 package (SC-70) with three terminals.

Feature Summary

• Integrates dual bias resistors to reduce external component count and equipment size
• Utilizes SMini3-G1 surface mount package for automated tape/magazine insertion

Applications

• Digital logic interface circuits
• Switching applications in general electronic equipment
• Automated assembly environments requiring compact discrete components

Procurement Notes

Verify the specific ordering suffix against official Panasonic documentation to confirm packaging format and lifecycle status. Confirm RoHS compliance requirements match project specifications. Check for any maintenance or discontinuation notices on the manufacturer's website before finalizing procurement plans.

Selection Notes

Select this component when a PNP transistor with integrated biasing is required for space-constrained designs. Ensure the internal resistor values (47 kΩ and 22 kΩ) align with the target circuit's drive requirements. Verify that the -50 V voltage rating and -100 mA current capacity meet the operational limits of the application.

Part Context

This part belongs to the UNR511x Series, which includes various configurations of PNP transistors with different internal resistor combinations. The series is manufactured by Panasonic Electronic Components for use in standard consumer and industrial electronics where board space optimization is critical.

Replacement Considerations

Consult the official datasheet for equivalent part numbers within the same series. Verify pinout compatibility and electrical characteristics before substituting.