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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：80 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SMini3-G1
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Overview
The Panasonic UNR511N00L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an S-Mini3-G1 package (SC-70) and operates within a collector-emitter voltage of -50 V and a collector current of -100 mA. The device includes a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 80 to 400 at VCE = -10 V and IC = -5 mA, a transition frequency (fT) of 80 MHz, and a total power dissipation of 150 mW.
Feature Summary
- Integrates a PNP transistor with two internal biasing resistors to reduce component count and equipment size.
- Utilizes an S-Mini3-G1 surface-mount package compatible with automatic insertion via tape/magazine packing.
Applications
- Digital logic interface circuits
- Switching applications in general electronic equipment
- Automotive electronics
Procurement Notes
Verify the specific suffix '00L' against official Panasonic documentation to confirm packaging details and lifecycle status. Confirm RoHS compliance requirements for your application. Check for any product change notifications or discontinuation notices prior to finalizing procurement plans.
Selection Notes
Select this component when a compact PNP switching solution with integrated biasing is required. Ensure the 4.7 kΩ base and 47 kΩ emitter resistance values align with your circuit design. Verify that the -50 V voltage rating and 150 mW power dissipation meet your system's operational limits.
Part Context
The UNR511N00L belongs to the UNR511x Series, which offers various combinations of transistors and built-in resistors. This series is engineered to simplify digital circuit designs by replacing discrete components with single packaged units, thereby saving board space and assembly time.
Replacement Considerations
Consult the UNR511x Series datasheet for alternative part numbers with matching hFE ranges and resistance values. Verify pinout compatibility and package dimensions before substituting with other manufacturers' pre-biased transistors.
FAQ
What are the internal resistance values for the UNR511N?
The UNR511N contains a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 47 kΩ.
What is the maximum collector-emitter voltage for this device?
The absolute maximum rating for collector-emitter voltage (VCEO) is -50 V.
What is the typical forward current transfer ratio (hFE)?
The hFE ranges from 80 to 400 under standard test conditions (VCE = -10 V, IC = -5 mA).
