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The UNR511V00L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an S-Mini3-G1 package (SC-70) with three terminals: Base, Emitter, and Collector. The device has a maximum collector-emitter voltage of -50 V and a maximum collector current of -100 mA. Total power dissipation is rated at 150 mW. The internal configuration includes a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 2.2 kΩ. The forward current transfer ratio (hFE) ranges from 6 to 20 under standard conditions.
Verify the specific suffix '00L' against official Panasonic documentation to confirm packaging format and availability status. Check for lifecycle stage updates such as planned maintenance or discontinuation on the manufacturer's website before finalizing procurement plans.
Select this component when a compact PNP switching solution with integrated biasing is required. Ensure the circuit operates within the -50 V collector-emitter voltage limit and does not exceed the 150 mW total power dissipation rating at the intended ambient temperature.
This part belongs to the UNR511x Series, which offers various combinations of built-in resistors. The UNR511V variant specifically provides matched 2.2 kΩ resistors for both base and emitter connections, distinguishing it from other series members like the UNR5110 or UNR5111.
Consult official Panasonic cross-reference lists for verified substitutes. Generic equivalents may not match the precise resistance tolerances or hFE rankings specified for the UNR511V.
The UNR511V contains a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 2.2 kΩ.
The absolute maximum rating for the collector current (IC) is -100 mA at an ambient temperature of 25°C.
Yes, the product complies with the RoHS Directive (EU 2002/95/EC).