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The UNR511VG0L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SMini3-F2 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Absolute maximum ratings include a collector-base voltage of -50 V, collector-emitter voltage of -50 V, collector current of -100 mA, total power dissipation of 150 mW, junction temperature up to 150 °C, and storage temperature from -55 to +150 °C. Electrical characteristics specify a forward current transfer ratio (hFE) minimum of 6 at IC = -5 mA and VCE = -10 V. The internal resistances are R1 = 2.2 kΩ and R2 = 2.2 kΩ.
Verify the exact ordering code against Panasonic's official documentation before procurement. Confirm that the specific suffix matches the required resistance values and hFE ranking. Check the manufacturer's website for the latest lifecycle status, as this series may be subject to maintenance or discontinuation phases.
Select the UNR511VG0L when a PNP pre-biased transistor with equal 2.2 kΩ base and emitter resistors is required. Ensure the application operates within the specified -50 V voltage limits and -100 mA current constraints. Verify that the SMini3-F2 footprint aligns with the PCB layout requirements for automated assembly.
This component belongs to the UNR511xG Series, which encompasses various PNP transistors with different integrated resistor configurations. The 'VG' suffix specifically denotes the 2.2 kΩ / 2.2 kΩ resistance combination. This series is engineered to simplify digital circuit designs by replacing discrete biasing networks with a single packaged device.
Consult the official Panasonic replacement list for direct equivalents. Cross-reference other manufacturers' pre-biased PNP transistors only if pinout, resistance values, and package dimensions match exactly.
The UNR511VG0L contains two internal resistors: R1 (Base) is 2.2 kΩ and R2 (Emitter) is 2.2 kΩ.
The marking symbol on the package for the UNR511VG0L is FC.
The minimum forward current transfer ratio (hFE) is 6, measured at a collector current of -5 mA and a collector-emitter voltage of -10 V.