UNR511VG0L

UNR511VG0L

$0.05
  • Description:TRANS PREBIAS PNP 50V SMINI3
  • Series:-

SKU:178c61b99643 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):2.2 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:6 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1.5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:80 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-85
  • Supplier Device Package:SMini3-F2

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UNR511VG0L

Overview

The UNR511VG0L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an SMini3-F2 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Absolute maximum ratings include a collector-base voltage of -50 V, collector-emitter voltage of -50 V, collector current of -100 mA, total power dissipation of 150 mW, junction temperature up to 150 °C, and storage temperature from -55 to +150 °C. Electrical characteristics specify a forward current transfer ratio (hFE) minimum of 6 at IC = -5 mA and VCE = -10 V. The internal resistances are R1 = 2.2 kΩ and R2 = 2.2 kΩ.

Feature Summary

  • Integrates dual base resistors within a single compact component to reduce circuit board space and part count.
  • Utilizes the SMini3-F2 surface-mount package to facilitate automated insertion via tape/magazine packing.

Applications

  • Digital logic interface circuits
  • Switching applications in consumer electronics
  • General-purpose digital signal processing

Procurement Notes

Verify the exact ordering code against Panasonic's official documentation before procurement. Confirm that the specific suffix matches the required resistance values and hFE ranking. Check the manufacturer's website for the latest lifecycle status, as this series may be subject to maintenance or discontinuation phases.

Selection Notes

Select the UNR511VG0L when a PNP pre-biased transistor with equal 2.2 kΩ base and emitter resistors is required. Ensure the application operates within the specified -50 V voltage limits and -100 mA current constraints. Verify that the SMini3-F2 footprint aligns with the PCB layout requirements for automated assembly.

Part Context

This component belongs to the UNR511xG Series, which encompasses various PNP transistors with different integrated resistor configurations. The 'VG' suffix specifically denotes the 2.2 kΩ / 2.2 kΩ resistance combination. This series is engineered to simplify digital circuit designs by replacing discrete biasing networks with a single packaged device.

Replacement Considerations

Consult the official Panasonic replacement list for direct equivalents. Cross-reference other manufacturers' pre-biased PNP transistors only if pinout, resistance values, and package dimensions match exactly.

FAQ

What are the specific resistance values for the UNR511VG0L?

The UNR511VG0L contains two internal resistors: R1 (Base) is 2.2 kΩ and R2 (Emitter) is 2.2 kΩ.

What is the marking symbol for this component?

The marking symbol on the package for the UNR511VG0L is FC.

What is the minimum forward current transfer ratio (hFE)?

The minimum forward current transfer ratio (hFE) is 6, measured at a collector current of -5 mA and a collector-emitter voltage of -10 V.

UNR511VG0LUNR511VG0L
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