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The UNR5154 is a silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features an S-Mini3-G1 package and operates with a collector-emitter voltage of -30 V and a maximum collector current of -100 mA. The device has a total power dissipation rating of 150 mW at 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) minimum of 80 at -5 mA, a transition frequency of 80 MHz, and an internal input resistance (R1) nominal value of 10 kΩ.
Verify the specific lifecycle status before ordering, as this product falls under maintenance or discontinued categories. Consult official Panasonic semiconductor channels for current availability and lead times. Ensure design compliance with absolute maximum ratings to prevent failure. Request the latest Product Standards documentation prior to final purchasing decisions to confirm specifications have not changed.
Select this component for designs requiring a compact PNP pre-biased transistor solution. The integrated 10 kΩ input resistor simplifies biasing networks compared to discrete BJT configurations. Verify that the -30 V voltage rating and -100 mA current capacity meet the specific load requirements of the target digital application.
This part belongs to the UNR515x series of transistors with built-in resistors manufactured by Panasonic Electronic Components. These components are engineered to replace multiple discrete parts in digital logic interfaces, thereby reducing board space and assembly complexity while maintaining reliable performance in standard consumer and industrial electronics.
Check for direct cross-references within the UNR515x family. Verify pinout compatibility if substituting with other S-Mini3 packages. Confirm that alternative manufacturers' pre-biased transistors match the required hFE and saturation voltage specifications.