UNR51ANG0L

Overview

The UNR51ANG0L is a PNP pre-biased bipolar junction transistor manufactured by Panasonic Electronic Components. It features an integrated resistor network consisting of R1 and R2, both specified at 47 kOhms. The device supports a maximum collector current (Ic) of 100 mA and a collector-emitter breakdown voltage (Vceo) of 50 V. Key electrical characteristics include a DC current gain (hFE) of 80 at Ic=5mA and Vce=10V, with a maximum saturation voltage of 250 mV at Ib=300µA and Ic=10mA. The transition frequency is 80 MHz, and the maximum power dissipation is 150 mW. It utilizes an S-mini3-G1 surface-mount package.

Feature Summary

• Integrates base and emitter resistors to simplify circuit design and reduce component count.
• Provides high-speed switching capability with an 80 MHz transition frequency.
• Offers low saturation voltage for efficient power management in compact applications.

Applications

• Switching circuits in wearable technology devices
• Signal amplification in portable consumer electronics
• Logic interface buffering in battery-powered systems

Procurement Notes

Verify part authenticity through authorized Panasonic distributors. Confirm package integrity upon receipt. Check datasheet revisions for updated electrical limits. Ensure ESD handling protocols are followed during assembly. Validate supplier documentation against official Panasonic specifications.

Selection Notes

Select this component for space-constrained designs requiring integrated biasing. Consider the 100 mA current limit and 50 V voltage rating for circuit compatibility. Evaluate thermal performance given the 150 mW power dissipation in the small S-mini3 package. Compare hFE and saturation voltage requirements against alternative pre-biased transistors.

Part Context

Part of the UNR511x series of pre-biased transistors designed for miniaturized electronic applications. The series emphasizes reduced board space and simplified assembly through integrated passive components. Widely utilized in modern wearable and portable device architectures where size and efficiency are critical constraints.

Replacement Considerations

Direct substitutes within the UNR511x family may offer similar form factors but require verification of resistor values and electrical parameters. Cross-reference with other manufacturers' pre-biased PNP transistors only if pinout and electrical specs match exactly. Always validate replacement parts against the original datasheet requirements.