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The Panasonic UNR521000L is a silicon NPN epitaxial planar pre-biased transistor designed for digital circuits. It integrates an internal base resistor (R1) of 47 kΩ within an SMini3-G1 package to reduce component count and equipment size. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (PT) of 150 mW at 25°C. The device features a transition frequency (fT) of 150 MHz and a DC current gain (hFE) ranging from 160 to 460.
Verify the specific part status on the manufacturer's official website before procurement, as this series includes products in maintenance or discontinued lifecycle stages. Confirm that the 47 kΩ internal resistance matches the design requirements. Ensure compliance with RoHS directives if applicable to the target market.
Select this component when a single NPN transistor with a fixed 47 kΩ base resistor is required. Verify that the 50 V breakdown voltage and 100 mA current limits accommodate the circuit load. Consider the 150 mW power dissipation capability relative to the ambient operating temperature.
This component belongs to the UNR521x Series, which offers various combinations of internal resistors. While other models in the series feature dual resistors or different values, the UNR521000L specifically provides a single 47 kΩ base resistor configuration suitable for standard switching tasks.
Consult the manufacturer's database for direct replacements. Cross-reference with other NPN pre-biased transistors offering similar 50 V ratings, 100 mA current capacity, and SMini3 packages if availability is an issue.
The internal base resistor (R1) is 47 kΩ.
No, the UNR521000L only contains a base resistor; it does not have an internal emitter resistor.
The maximum collector current (IC) is 100 mA.