SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic UNR5211G0L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (PT) of 150 mW at 25°C. The transition frequency (fT) is 150 MHz. For this specific model, the internal resistance R1 is 10 kΩ and R2 is 10 kΩ.
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the SMini3-F2 package dimensions and pinout align with your PCB layout requirements. Ensure compliance with RoHS Directive standards if required by your project specifications. Check the latest product lifecycle status directly from the manufacturer's website.
Select the UNR5211G0L when a 50 V NPN transistor with dual 10 kΩ bias resistors is needed. Compare its 100 mA current rating and 150 mW power dissipation against circuit demands. Consider the SMini3-F2 package size for space-constrained designs. Verify that the 150 MHz transition frequency meets the signal speed requirements of the application.
This component belongs to the UNR521xG series of transistors with built-in resistors manufactured by Panasonic Industry. The series offers various resistor combinations to suit different logic levels. The UNR5211G0L specifically provides equal 10 kΩ resistors on both base and emitter terminals within a compact surface-mount footprint.
Consult the official Panasonic replacement guide or datasheet for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' pre-biased transistors without verifying pinout, voltage ratings, and resistor values.