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The UNR5212G0L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 surface-mount package with three pins: Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device has a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Total power dissipation is limited to 150 mW at 25°C ambient temperature. The internal configuration includes two resistors, R1 and R2, both rated at 22 kΩ. The forward current transfer ratio (hFE) has a minimum value of 60 at IC = 5 mA and VCE = 10 V. The transition frequency is specified at 150 MHz.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm resistor values and packaging type. Confirm compliance with RoHS Directive (EU 2002/95/EC) requirements for the intended market. Check the latest product lifecycle status on the Panasonic semiconductor website as this series may be subject to maintenance or discontinuation phases.
Select this component when a single NPN transistor with two specific bias resistors is required to simplify circuit design. Ensure the 22 kΩ resistor values match the base drive requirements. Verify that the 50 V voltage rating and 100 mA current capacity exceed the maximum operating conditions of the target application.
This part belongs to the UNR521xG Series of transistors with built-in resistors from Panasonic Industry. The series offers various combinations of R1 and R2 values to suit different digital circuit needs. The UNR5212G0L specifically provides a symmetrical 22 kΩ / 22 kΩ resistor configuration within the SMini3-F2 package.
Consult the official Panasonic replacement list for verified substitutes. Cross-reference pinouts and electrical characteristics carefully if considering generic equivalents.