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The UNR5213G0L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and a total power dissipation (PT) of 150 mW at 25°C. The forward current transfer ratio (hFE) has a minimum value of 80 at IC = 5 mA and VCE = 10 V. The transition frequency (fT) is 150 MHz. Internal resistance values are R1 = 47 kΩ and R2 = 47 kΩ.
Verify the exact part number against official Panasonic documentation before procurement. Confirm that the specific suffix matches the required internal resistor configuration. Check the manufacturer's website for the latest product lifecycle status, as this series may be subject to maintenance or discontinuation notices.
Select this component when a compact NPN pre-biased transistor is needed for digital logic interfaces. Ensure the 50 V collector-emitter voltage rating meets the circuit requirements. Verify that the 47 kΩ internal base and emitter resistors align with the desired drive characteristics and saturation levels.
This device belongs to the UNR521xG Series of transistors with built-in resistors manufactured by Panasonic Industry. The series offers various combinations of internal resistances to suit different digital switching needs while maintaining a consistent SMini3-F2 surface-mount package form factor.
Consult the official Panasonic replacement list for verified substitutes. Cross-referencing with other manufacturers requires careful validation of pinout compatibility, absolute maximum ratings, and internal resistance tolerances.