UNR521400L

Overview

The UNR521400L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an S-Mini3-G1 package (EIAJ SC-70) with three terminals: Base, Emitter, and Collector. The device has a maximum collector-emitter voltage of 50 V and a continuous collector current rating of 100 mA. Total power dissipation is limited to 150 mW at 25°C ambient temperature. Internal resistance values are R1 = 10 kΩ and R2 = 47 kΩ, yielding a nominal ratio of 0.21. Transition frequency is specified at 150 MHz.

Feature Summary

• Integrates two internal bias resistors to reduce component count and equipment size.
• Utilizes an S-Mini surface-mount package suitable for automatic insertion via tape or magazine packing.

Applications

• Digital logic interface circuits
• General-purpose switching applications in electronic equipment

Procurement Notes

Verify the specific suffix '00L' against official Panasonic documentation to confirm packaging format and lifecycle status. Confirm RoHS compliance requirements for your application. Check for any maintenance or discontinued notices on the manufacturer's website before finalizing procurement plans.

Selection Notes

Select this component when a single NPN transistor with fixed base biasing is required for digital switching. Ensure the 10k/47k resistor combination matches the circuit design needs. Verify that the 150mW power dissipation limit accommodates the thermal conditions of the target application.

Part Context

This part belongs to the UNR521x series of pre-biased transistors manufactured by Panasonic Industry. The series offers various resistor combinations within the same S-Mini package footprint, allowing designers to standardize assembly processes while adjusting biasing characteristics for different digital circuit requirements.

Replacement Considerations

Consult the official Panasonic datasheet for direct cross-references. Verify pinout compatibility and electrical parameters such as Vceo and hFE before substituting with other manufacturers' pre-biased transistors.