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The UNR5214G0L is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an S-Mini3-F2 package with three pins: Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device has a maximum collector-emitter voltage of 50 V and a maximum collector current of 100 mA. Total power dissipation is rated at 150 mW. Internal resistance values are R1 = 10 kΩ and R2 = 47 kΩ. The forward current transfer ratio (hFE) ranges from 80 to 400 under standard conditions.
Verify the specific ordering suffix against official Panasonic documentation to confirm packaging format and lifecycle status. Confirm RoHS compliance requirements for the target application. Check for any maintenance or discontinuation notices on the manufacturer's website before finalizing procurement plans.
Select this component when a pre-biased NPN transistor is required for digital logic interfacing. Ensure the internal resistor values (10 kΩ and 47 kΩ) match the circuit design requirements. Verify that the 50 V voltage rating and 100 mA current capacity exceed the operational limits of the intended load.
This part belongs to the UNR521xG series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor combinations to suit different digital circuit needs while maintaining a consistent small outline package form factor.
Consult the official Panasonic replacement guide for verified substitute part numbers within the UNR521xG series or equivalent industry components. Do not assume functional compatibility without verifying electrical parameters and pin configurations.
The UNR5214G contains an internal base resistor (R1) of 10 kΩ and an internal emitter resistor (R2) of 47 kΩ.
The maximum total power dissipation (PT) is 150 mW at an ambient temperature of 25°C.
The transition frequency is specified as 150 MHz under conditions of VCB = 10 V and IE = -2 mA.