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The Panasonic UNR521500L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 100 mA. The device has a total power dissipation (PT) of 150 mW at 25°C and a transition frequency (fT) of 150 MHz. It utilizes an S-Mini3-G1 package (EIAJ SC-70). The internal resistance configuration includes R1 at 4.7 kΩ and R2 as open circuit.
Verify the specific suffix '00L' against official Panasonic documentation to confirm availability status and exact packaging details. Confirm RoHS compliance requirements for the target application. Check for any lifecycle notices such as planned maintenance or discontinuation on the manufacturer's website before finalizing procurement plans.
Select this component when a compact NPN pre-biased transistor is required for digital switching. Ensure the 50 V collector-emitter voltage and 100 mA current ratings meet the circuit demands. Verify that the 4.7 kΩ base resistor value provides appropriate drive characteristics for the intended load conditions.
This part belongs to the UNR521x series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistance combinations to suit different digital circuit requirements while maintaining a consistent small outline package form factor.
Consult the official Panasonic datasheet for confirmed substitute part numbers within the UNR521x family. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.
The UNR521500L contains a base resistor (R1) of 4.7 kΩ. The second resistor (R2) is not connected (open).
The maximum collector-emitter voltage (VCEO) is 50 V.
It uses the S-Mini3-G1 package, which corresponds to the EIAJ SC-70 standard.