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The UNR5215G0L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 package with pin configuration of Base (1), Emitter (2), and Collector (3). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a collector current (IC) of 100 mA, and total power dissipation (PT) of 150 mW at 25°C. The transition frequency (fT) is 150 MHz. For the UNR5215G variant, the internal base resistor (R1) is 10 kΩ. The forward current transfer ratio (hFE) ranges from 160 to 460.
Verify the specific lifecycle status directly with Panasonic Industry, as the datasheet indicates maintenance or discontinuation phases for this series. Confirm RoHS compliance (EU 2002/95/EC) and ensure the ordering suffix matches the required packaging format. Cross-reference the marking symbol '8E' to validate the exact resistance configuration during procurement.
Select the UNR5215G0L when a fixed 10 kΩ base drive resistor is required for NPN switching. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA maximum collector current. Consider the 150 mW power dissipation constraint at ambient temperatures up to 25°C. Verify that the hFE range of 160 to 460 meets the circuit's gain requirements.
This component belongs to the UNR521xG Series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor configurations to suit different digital driving needs. The UNR5215G0L specifically designates the version with a 10 kΩ base resistor in the SMini3-F2 package.
Consult Panasonic's official replacement list for the UNR521xG series. No direct cross-manufacturer substitutes are confirmed in the provided documentation. Verify if alternative part numbers within the same series offer compatible pinouts and electrical characteristics.