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The Panasonic UNR521600L is a Silicon NPN epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and has a total power dissipation rating of 150 mW at 25°C ambient temperature. It utilizes an SMini3-G1 package (EIAJ SC-70). The specific configuration includes a base resistor (R1) of 4.7 kΩ and no collector resistor (R2), providing a forward current transfer ratio (hFE) minimum of 60.
Verify the exact part number against official manufacturer documentation, as standard series designations typically follow the UNR521x format. Confirm lifecycle status, as this series may be subject to maintenance or discontinuation plans. Ensure compliance with RoHS directives if required by your application specifications.
Select based on the required internal resistance values; the UNR5216 variant provides a 4.7 kΩ base resistor. Verify that the 50 V collector-emitter voltage and 100 mA current ratings meet the circuit requirements. Consider the thermal characteristics and power dissipation limits when designing for higher ambient temperatures.
This component belongs to the UNR521x Series, which comprises various NPN transistors with built-in resistors. The series offers different resistance combinations to suit diverse digital circuit needs. All devices share common electrical characteristics such as voltage ratings and package types, differing primarily in their internal resistor configurations.
Consult the official Panasonic replacement list for verified substitutes. Cross-reference internal resistance values and hFE rankings to ensure functional equivalence in existing designs.