UNR521700L

Overview

The UNR521700L is a silicon NPN epitaxial planar pre-biased transistor from the UNR521x series, designed for digital circuits. It integrates an internal base resistor (R1) of 22 kΩ within an SMini3-G1 package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a total power dissipation (PT) of 150 mW at 25°C. The device features a transition frequency (fT) of 150 MHz and a DC current gain (hFE) ranging from 60 to 400 depending on the specific rank classification.

Feature Summary

• Integrates a single built-in base resistor to reduce component count and equipment size
• Utilizes an SMini3-G1 surface-mount package compatible with automatic insertion via tape packing

Applications

• Digital logic interface circuits
• Switching applications in general electronic equipment
• Driver stages for low-power loads

Procurement Notes

Verify the exact suffix against official Panasonic Industry documentation to confirm resistance values and hFE ranks. Confirm lifecycle status as the UNR521x series includes discontinued variants. Request the latest datasheet revision before finalizing design specifications.

Selection Notes

Select based on required base resistance value and desired current gain range. Ensure operating conditions remain within the absolute maximum ratings for voltage, current, and power dissipation. Consider thermal derating requirements if ambient temperatures exceed 25°C.

Part Context

This component belongs to the UNR521x series of pre-biased transistors manufactured by Panasonic Industry. These devices are engineered to replace discrete BJT and resistor combinations, simplifying PCB layout and assembly processes for standard digital applications.

Replacement Considerations

Consult official Panasonic Industry cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameter equivalence before implementation.