SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UNR5219G0L is a silicon NPN epitaxial planar pre-biased transistor from the UNR521xG series, designed for digital circuits. It integrates two resistors: R1 (Base) is 1 kΩ and R2 (Collector-Base) is 10 kΩ. The device operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Total power dissipation is rated at 150 mW at 25°C ambient temperature. The transition frequency is 150 MHz, and the forward current transfer ratio ranges from 30 to 100. It utilizes an SMini3-F2 surface-mount package.
Verify the specific part number against official Panasonic Industry documentation to confirm availability status. Check for any maintenance or discontinuation notices on the manufacturer's website before finalizing procurement plans. Ensure compliance with export control regulations if applicable.
Select this component when a compact NPN solution with integrated base and collector-base biasing is required. Verify that the 1 kΩ base resistor and 10 kΩ collector-base resistor values align with the target circuit design requirements. Confirm that the SMini3-F2 package dimensions fit the PCB layout constraints.
This component belongs to the UNR521xG series of pre-biased transistors manufactured by Panasonic Industry. The series offers various resistor combinations within the same SMini3-F2 package to simplify digital circuit designs. The UNR5219G0L specifically provides a 1 kΩ base resistor and a 10 kΩ collector-base resistor configuration.
Consult official Panasonic Industry resources for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' pre-biased transistors without verifying electrical characteristics and pin configurations.