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The UNR521F00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an S-Mini3-G1 package (EIAJ SC-70) with three terminals: Base, Emitter, and Collector. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V, with a total power dissipation of 150 mW at 25°C. The internal resistor configuration consists of R1 = 4.7 kΩ and R2 = 10 kΩ, yielding a resistance ratio of approximately 0.47. The forward current transfer ratio (hFE) ranges from 60 to 200 under standard test conditions.
Verify the specific suffix 'L' against official Panasonic documentation to confirm packaging details, as datasheets may list standard reel or tube options. Confirm RoHS compliance status and lifecycle stage directly with the manufacturer before procurement.
Select this component when a pre-biased NPN transistor with a 4.7kΩ base resistor and 10kΩ emitter resistor is required. Ensure the 100mA current rating and 50V voltage limits align with the target circuit design requirements.
This part belongs to the UNR521x Series, which includes various combinations of built-in resistors for different biasing needs. All devices in this series share the same physical package and core transistor characteristics, differing only in the integrated resistor values.
Consult official Panasonic cross-reference lists for verified substitutes. Generic equivalents may not match the precise internal resistor ratios or hFE rankings specified for this part number.
The UNR521F variant includes a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 10 kΩ.
The transition frequency (fT) is 150 MHz, measured at VCB = 10 V, IE = -2 mA, and f = 200 MHz.
No. The datasheet specifies that these products are intended for standard applications like office and household equipment, not for life-support or safety-critical systems.