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The UNR521FG0L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 100 mA. The device has a total power dissipation (PT) of 150 mW at 25°C ambient temperature. Internal resistance values are R1 = 4.7 kΩ and R2 = 10 kΩ. The forward current transfer ratio (hFE) ranges from 30 to 90 under standard conditions. Transition frequency (fT) is specified at 150 MHz.
Verify the specific ordering suffix against Panasonic's official lifecycle database before procurement. Confirm RoHS compliance status and check for maintenance or discontinuation notices on the manufacturer website. Ensure the requested quantity matches available packaging formats such as cut tape or reel.
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the internal resistor values (4.7 kΩ and 10 kΩ) align with the target circuit design. Ensure the operating voltage does not exceed the 50 V collector-emitter rating and that thermal constraints allow for 150 mW dissipation.
This part belongs to the UNR521xG Series, which includes various combinations of built-in resistors. All members share the same SMini3-F2 package and core electrical ratings, differing primarily in the resistance ratios and hFE gain ranks. This series is intended for downsizing digital circuits.
Consult the official Panasonic replacement list for equivalent parts within the UNR521xG family. Verify pinout compatibility and internal resistance values before substituting with other manufacturers' pre-biased transistors.
The internal resistors are R1 = 4.7 kΩ and R2 = 10 kΩ.
The transition frequency (fT) is 150 MHz.
Yes, the datasheet states that this product complies with the RoHS Directive (EU 2002/95/EC).