UNR521LG0L

Overview

The UNR521LG0L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 package with pin configuration of Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device has a maximum collector current of 100 mA and a total power dissipation of 150 mW at 25°C. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a transition frequency of 150 MHz, and a collector-emitter saturation voltage of 0.25 V max at IC=10mA/IB=0.3mA. The integrated resistors are R1 = 4.7 kΩ and R2 = 4.7 kΩ.

Feature Summary

• Integrates two bias resistors to reduce component count and board space
• Utilizes the compact SMini3 surface-mount package for automated assembly

Applications

• Digital logic circuits
• Switching applications
• General-purpose electronic equipment

Procurement Notes

Verify the specific lifecycle status directly with Panasonic Industry, as the datasheet indicates maintenance or discontinuation stages may apply. Confirm RoHS compliance and ensure the ordering suffix matches the required resistance values. Cross-reference the marking symbol '8Q' to validate the internal resistor configuration before finalizing procurement orders.

Selection Notes

Select this component when a low-profile NPN pre-biased transistor is required for digital switching. Ensure the 4.7kΩ/4.7kΩ resistor ratio meets the circuit drive requirements. Verify that the 150mW power dissipation rating accommodates the thermal conditions of the target application environment.

Part Context

This part belongs to the UNR521xG series of transistors with built-in resistors manufactured by Panasonic Electronic Components. The series offers various resistor combinations within the same SMini3-F2 footprint to standardize inventory while providing different biasing options for diverse digital circuit designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.