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The UNR521M00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an S-Mini3-G1B package (EIAJ SC-70) with three terminals: Base, Emitter, and Collector. The device supports a maximum collector current of 100 mA and a total power dissipation of 150 mW at 25°C. Key electrical parameters include a collector-emitter voltage of 50 V, a transition frequency of 150 MHz, and a forward current transfer ratio (hFE) ranging from 6 to 20. Internal resistance values are R1 = 2.2 kΩ and R2 = 47 kΩ.
Verify the specific ordering suffix against official Panasonic documentation to confirm exact packaging configuration. Confirm RoHS compliance status and lifecycle stage prior to purchase. Ensure design requirements align with absolute maximum ratings and guaranteed operating conditions specified in the datasheet.
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the internal resistor values (2.2 kΩ and 47 kΩ) match the circuit design needs. Consider the S-Mini package dimensions for PCB layout constraints and ensure thermal management supports the 150 mW power dissipation limit.
This part belongs to the UNR521x Series, which includes various NPN transistors with different internal resistor combinations. The series is designed for cost reduction through downsizing and part count minimization in digital applications. The UNR521M variant specifically denotes the 2.2 kΩ / 47 kΩ resistor configuration within this family.
Consult official Panasonic resources for verified substitute part numbers. Cross-referencing requires matching electrical characteristics, package type, and internal resistance values to ensure functional compatibility without redesign.