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The UNR521N00L is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an S-Mini3-G1 package (EIAJ SC-70) and operates with a collector-emitter voltage of 50 V and a maximum collector current of 100 mA. The device includes two integrated resistors: R1 is 4.7 kΩ and R2 is 47 kΩ, yielding a resistance ratio of 0.1. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 80 to 400 at IC = 5 mA and VCE = 10 V, a transition frequency of 150 MHz, and a total power dissipation of 150 mW.
Verify the specific suffix against official Panasonic documentation to confirm availability status, as lifecycle stages such as maintenance or discontinuation may apply. Confirm that the ordering code matches the required resistance values and hFE rank. Ensure compliance with RoHS directives and verify absolute maximum ratings before integration into final designs.
Select this component when a compact NPN transistor with fixed biasing is required for digital applications. The 4.7 kΩ base resistor and 47 kΩ collector resistor define the operating point. Consider the 150 mW power dissipation limit and the 50 V voltage rating. Verify the hFE range meets the circuit gain requirements.
This part belongs to the UNR521x Series, which comprises various NPN transistors with built-in resistors. The series offers different resistance combinations and hFE ranks to suit diverse digital circuit needs while maintaining the same small outline package footprint.
Consult the official Panasonic replacement list for verified substitutes. Cross-referencing requires matching the package type, pin configuration, and electrical parameters precisely.