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The UNR521TG0L is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 package with pin configurations of Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device supports a maximum collector current of 100 mA and a total power dissipation of 150 mW at 25°C. Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a transition frequency of 150 MHz, and a forward current transfer ratio (hFE) ranging from 80 to 400. The internal resistance configuration consists of R1 at 22 kΩ and R2 at 47 kΩ.
Verify the specific ordering suffix against official Panasonic documentation to confirm resistor values and hFE ranking. Confirm availability status as the series may be subject to maintenance or discontinuation phases. Ensure the selected variant matches the required resistance ratio and current gain specifications for the target design.
Select this component when a compact NPN switching solution with integrated base drive is required. Verify that the 22 kΩ input resistor and 47 kΩ emitter resistor align with the circuit's biasing needs. Check the hFE range requirements against the specified minimum and maximum values to ensure proper saturation performance.
This component belongs to the UNR521xG series of pre-biased transistors manufactured by Panasonic Industry. The series offers various combinations of internal resistors and gain rankings to suit different digital switching requirements while maintaining a consistent small outline footprint.
Consult the official Panasonic replacement list for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' digital transistors without verifying pinout, voltage ratings, and internal resistance ratios.