UNR522600L

Overview

The Panasonic UNR522600L is an NPN pre-biased bipolar junction transistor in the SMini3-G1 package. It features a collector-emitter breakdown voltage of 20 V and a maximum collector current of 600 mA. The device has a transition frequency of 200 MHz and a power dissipation rating of 150 mW. Collector cutoff current is specified at 1 µA, with saturation voltage at 80 mV under defined bias conditions.

Feature Summary

• Integrated pre-biasing circuitry for simplified design
• Surface mount construction in compact SMini3-G1 package
• High-frequency operation capability up to 200 MHz

Applications

• General-purpose switching applications
• Low-voltage signal processing circuits
• Embedded system interface drivers

Procurement Notes

This component is officially listed as obsolete by Panasonic Electronic Components. Verify end-of-life status through authorized distributors or manufacturer archives before integration into new designs. No active production is confirmed. Check datasheet revision history for final specifications.

Selection Notes

Select this part only if legacy compatibility is required. The 20 V rating limits high-voltage use. Pre-biasing reduces external resistor count but may affect gain variability. Compare thermal performance in 150 mW limit against target duty cycle. Confirm package footprint matches PCB layout constraints.

Part Context

Part of Panasonic’s discrete semiconductor lineup focusing on surface-mount BJT solutions. Designed for space-constrained electronics requiring integrated bias networks. Belongs to the pre-biased transistor category, combining transistor and resistors in one package to reduce board area and assembly steps.

Replacement Considerations

No public substitute part numbers are documented. Obsolete status limits direct replacements. Evaluate generic NPN pre-biased transistors with matching 20 V, 600 mA, and SMini3-G1 specifications from other manufacturers after verifying electrical equivalence.