UNR52A0G0L

UNR52A0G0L

$0.05
  • Description:TRANS PREBIAS NPN 50V SMINI3
  • Series:-

SKU:559b15c096e3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:150 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-85
  • Supplier Device Package:SMini3-F2

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UNR52A0G0L

Overview

The UNR52A0G is a silicon NPN epitaxial planar pre-biased transistor designed for digital circuits. It integrates an internal base resistor (47 kΩ) to simplify circuit design and reduce component count. The device features an SMini3-F2 surface-mount package with a collector-emitter voltage rating of 50 V, a maximum collector current of 80 mA, and a total power dissipation of 150 mW at 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 at IC=5mA, a transition frequency (fT) of 150 MHz, and a collector-emitter saturation voltage of 0.25 V at IC=10 mA.

Feature Summary

  • Integrates a built-in 47 kΩ base resistor to minimize external components and board space.
  • Utilizes the compact SMini3-F2 package for automated tape packing and easy insertion.
  • Optimized for digital switching applications with defined high-level and low-level output voltages.

Applications

  • General-purpose digital logic circuits
  • Office equipment signal processing
  • Communications equipment interface stages

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official product standards before purchase. The datasheet indicates this component falls under maintenance or discontinued lifecycle stages. Confirm availability and latest specifications directly with Panasonic sales staff to ensure compliance with current manufacturing status and lead time requirements.

Selection Notes

Select this component when a single NPN transistor with a fixed 47 kΩ base resistor is required for digital switching. Ensure the operating collector current remains within the 80 mA limit and that the 50 V breakdown voltage accommodates the circuit's peak voltage. Verify that the SMini3-F2 footprint aligns with the PCB layout constraints.

Part Context

This part belongs to the UNR series of transistors with built-in resistors manufactured by Panasonic Electronic Components. These devices are engineered to replace discrete transistor-resistor combinations in standard electronic equipment. The UNR52A0G specifically targets applications requiring moderate current handling and high gain in a small form factor.

Replacement Considerations

Consult the manufacturer's official cross-reference list for verified substitutes. Generic replacements must match the NPN configuration, 50V rating, 80mA current limit, and integrated 47kΩ resistance value.

FAQ

What is the tolerance range for the internal base resistor?

The internal input resistance (R1) has a nominal value of 47 kΩ with a tolerance of -30% to +30%.

What is the maximum collector-base cutoff current?

The collector-base cutoff current (ICBO) is specified as a maximum of 0.1 mA when VCB is 50 V and IE is 0.

How is the pinout configured for the SMini3-F2 package?

Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.

UNR52A0G0LUNR52A0G0L
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