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The UNR52A0G is a silicon NPN epitaxial planar pre-biased transistor designed for digital circuits. It integrates an internal base resistor (47 kΩ) to simplify circuit design and reduce component count. The device features an SMini3-F2 surface-mount package with a collector-emitter voltage rating of 50 V, a maximum collector current of 80 mA, and a total power dissipation of 150 mW at 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 at IC=5mA, a transition frequency (fT) of 150 MHz, and a collector-emitter saturation voltage of 0.25 V at IC=10 mA.
Verify the specific ordering suffix against the manufacturer's official product standards before purchase. The datasheet indicates this component falls under maintenance or discontinued lifecycle stages. Confirm availability and latest specifications directly with Panasonic sales staff to ensure compliance with current manufacturing status and lead time requirements.
Select this component when a single NPN transistor with a fixed 47 kΩ base resistor is required for digital switching. Ensure the operating collector current remains within the 80 mA limit and that the 50 V breakdown voltage accommodates the circuit's peak voltage. Verify that the SMini3-F2 footprint aligns with the PCB layout constraints.
This part belongs to the UNR series of transistors with built-in resistors manufactured by Panasonic Electronic Components. These devices are engineered to replace discrete transistor-resistor combinations in standard electronic equipment. The UNR52A0G specifically targets applications requiring moderate current handling and high gain in a small form factor.
Consult the manufacturer's official cross-reference list for verified substitutes. Generic replacements must match the NPN configuration, 50V rating, 80mA current limit, and integrated 47kΩ resistance value.
The internal input resistance (R1) has a nominal value of 47 kΩ with a tolerance of -30% to +30%.
The collector-base cutoff current (ICBO) is specified as a maximum of 0.1 mA when VCB is 50 V and IE is 0.
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.