UNR52A1G0L

Overview

The UNR52A1G is a Silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SMini3-F2 package and operates with a collector-emitter voltage of 50 V and a maximum collector current of 80 mA. The device dissipates up to 150 mW at 25°C ambient temperature. Internal resistors R1 and R2 are both nominally 10 kΩ, yielding a resistance ratio of 1.0. Key electrical characteristics include a forward current transfer ratio (hFE) minimum of 35 at 5 mA, a saturation voltage of 0.25 V at 10 mA, and a transition frequency of 150 MHz.

Feature Summary

• Integrates dual bias resistors to reduce component count and equipment size
• Utilizes the SMini3-F2 surface-mount package for automated insertion

Applications

• Digital circuit switching applications
• General electronic equipment such as office and communication devices

Procurement Notes

Verify the specific lifecycle status before procurement, as this component falls under maintenance or discontinued categories. Confirm that the SMini3-F2 package dimensions align with the target PCB land pattern. Ensure design parameters remain within the absolute maximum ratings to prevent failure during transient states like power-on or mode-switching.

Selection Notes

Select this component when a compact NPN pre-biased transistor is required for standard digital logic levels. Verify that the 80 mA collector current limit and 150 mW power dissipation meet the load requirements. Consider the 10 kΩ internal resistor values for base drive calculations and ensure the operating environment stays within the specified junction temperature range.

Part Context

This part belongs to Panasonic's series of transistors with built-in resistors, intended for downsizing equipment through part reduction. The UNR52A1G specifically utilizes the SMini3-F2 package code and FK marking symbol. It is manufactured by Matsushita Electric Industrial Co., Ltd. and complies with the RoHS Directive.

Replacement Considerations

Direct substitutes must match the NPN configuration, 50V rating, and integrated resistor topology. Verify pinout compatibility with the SMini3-F2 package (Base-Emitter-Collector). Check if alternative manufacturers offer equivalent hFE and fT specifications for the same digital application context.