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The UNR52A3G is a silicon NPN epitaxial planar pre-biased transistor designed for digital circuits. It integrates two resistors within an SMini3-F2 package to reduce component count and equipment size. Key electrical parameters include a collector-emitter voltage of 50 V, a maximum collector current of 80 mA, and a total power dissipation of 150 mW at 25°C. The device features a transition frequency of 150 MHz and a DC current gain (hFE) minimum of 80 at 5 mA. Internal resistances R1 and R2 are both nominally 47 kΩ.
Verify the specific lifecycle status before procurement as this component may be discontinued or in maintenance phases. Confirm that the internal resistor values and package dimensions match the design requirements. Ensure compliance with RoHS directives if applicable to the target market. Consult official manufacturer channels for the most recent availability data.
Select this component when a compact NPN solution with integrated biasing is required for low-current digital switching. Verify that the 80 mA collector current limit and 150 mW power dissipation meet the circuit load requirements. Consider the 50 V breakdown voltage for appropriate signal levels. Check thermal derating curves for high-temperature environments.
This part belongs to the Panasonic UNR series of transistors with built-in resistors. These components are engineered to simplify circuit designs by replacing discrete transistors and biasing networks with a single surface-mount unit. The series supports various configurations for standard digital applications.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings if considering alternative manufacturers' pre-biased transistors.
The internal base resistor (R1) and emitter resistor (R2) are both nominally 47 kΩ.
The absolute maximum rating for collector current (IC) is 80 mA.
It uses the SMini3-F2 surface-mount package.