UNR52A4G0L

Overview

The Panasonic UNR52A4G is a silicon NPN epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It operates within a collector-emitter voltage of 50 V and supports a maximum collector current of 80 mA. The device features a transition frequency of 150 MHz and a total power dissipation of 150 mW. Internal resistances include R1 at 10 kΩ and R2 at 47 kΩ. Packaged in the SMini3-F2 surface-mount format, it integrates a single BJT with pre-biased resistors to simplify circuit design.

Feature Summary

• Integrates an NPN transistor with two internal bias resistors (R1 and R2) to reduce component count and board space.
• Utilizes the SMini3-F2 package to facilitate automated insertion through tape packing.
• Designed specifically for use in digital circuits.

Applications

• General electronic equipment such as office machines and measuring instruments.
• Communications equipment requiring compact digital switching solutions.
• Household appliances utilizing standard digital logic interfaces.

Procurement Notes

Verify the specific lifecycle status before procurement, as the documentation indicates maintenance or discontinuation stages. Confirm that the required quantity matches the manufacturer's standard packaging specifications. Ensure compliance with RoHS directives if applicable to the target market. Request the latest product standards directly from the manufacturer to confirm current availability and final specifications prior to purchase.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for digital applications. Verify that the 80 mA collector current limit meets the load requirements. Ensure the operating environment remains within the specified junction temperature range of -55°C to +150°C. Consider the SMini3-F2 footprint constraints during PCB layout planning.

Part Context

This component belongs to the UNR52 series of transistors with built-in resistors manufactured by Panasonic Industry. It shares the same functional architecture as other models in the family but differs in specific electrical ratings and internal resistance values. The series is characterized by its integration of discrete components into a single surface-mount package.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer for current equivalent recommendations.

FAQ

What are the internal resistance values for the UNR52A4G?

The internal base resistor (R1) is 10 kΩ, and the internal emitter-base resistor (R2) is 47 kΩ.

What is the maximum collector current rating?

The absolute maximum collector current (IC) is rated at 80 mA.

What is the transition frequency of this transistor?

The transition frequency (fT) is 150 MHz under conditions of VCB = 10 V and IE = -2 mA.