SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Panasonic UNR52AFG0L is a pre-biased NPN bipolar junction transistor (BJT) designed for surface-mount applications. It integrates an internal bias resistor network to simplify circuit design and reduce component count. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Key electrical specifications include a DC current gain (hFE) of at least 60 at IC=5mA and VCE=10V, with a saturation voltage of 250mV max at IB=300µA and IC=10mA. The transition frequency is rated at 150MHz, and the maximum power dissipation is 150mW. It is housed in an S-Mini3-F2 package.
Verify the specific suffix 'FG0L' against official Panasonic documentation to confirm exact tape-and-reel specifications and marking codes. Confirm end-of-life status as availability may be limited due to discontinuation notices. Ensure compatibility with automated pick-and-place equipment regarding the S-Mini3-F2 package dimensions.
Select this component when a compact NPN solution with integrated biasing is required for high-speed switching. Compare hFE and VCE(sat) values against alternative pre-biased transistors to ensure adequate drive margin. Verify thermal management capabilities given the 150mW power dissipation limit in the small surface-mount package.
The UNR series represents Panasonic's line of pre-biased transistors, combining a BJT with internal resistors to form a complete switching unit. This specific model belongs to the S-Mini3 package family, offering a compact footprint for dense PCB layouts. It serves as a drop-in replacement for discrete resistor-transistor networks in consumer and industrial electronics.
Check Panasonic's official cross-reference lists for direct replacements. Consider equivalent pre-biased NPN transistors from other manufacturers with matching 50V/100mA ratings and S-Mini3-compatible footprints if supply constraints exist.