UNR52AFG0L

UNR52AFG0L

$0.03
  • Description:TRANS PREBIAS NPN 50V SMINI3
  • Series:-

SKU:ddd49ad0d0a3 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SMINI3
  • Series:-
  • Mfr:Panasonic Electronic Components
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):80 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:150 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-85
  • Supplier Device Package:SMini3-F2

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UNR52AFG0L

Overview

The Panasonic UNR52AFG0L is a pre-biased NPN bipolar junction transistor (BJT) designed for surface-mount applications. It integrates an internal bias resistor network to simplify circuit design and reduce component count. The device features a maximum collector-emitter voltage of 50V and a continuous collector current rating of 100mA. Key electrical specifications include a DC current gain (hFE) of at least 60 at IC=5mA and VCE=10V, with a saturation voltage of 250mV max at IB=300µA and IC=10mA. The transition frequency is rated at 150MHz, and the maximum power dissipation is 150mW. It is housed in an S-Mini3-F2 package.

Feature Summary

  • Integrated bias resistor network simplifies driving circuits and reduces board space requirements.
  • High-frequency operation capability suitable for RF and signal processing applications.
  • Low saturation voltage ensures efficient switching performance with minimal power loss.

Applications

  • Driver circuits for small-signal switching applications
  • Logic level translation interfaces
  • General-purpose amplification stages

Procurement Notes

Verify the specific suffix 'FG0L' against official Panasonic documentation to confirm exact tape-and-reel specifications and marking codes. Confirm end-of-life status as availability may be limited due to discontinuation notices. Ensure compatibility with automated pick-and-place equipment regarding the S-Mini3-F2 package dimensions.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for high-speed switching. Compare hFE and VCE(sat) values against alternative pre-biased transistors to ensure adequate drive margin. Verify thermal management capabilities given the 150mW power dissipation limit in the small surface-mount package.

Part Context

The UNR series represents Panasonic's line of pre-biased transistors, combining a BJT with internal resistors to form a complete switching unit. This specific model belongs to the S-Mini3 package family, offering a compact footprint for dense PCB layouts. It serves as a drop-in replacement for discrete resistor-transistor networks in consumer and industrial electronics.

Replacement Considerations

Check Panasonic's official cross-reference lists for direct replacements. Consider equivalent pre-biased NPN transistors from other manufacturers with matching 50V/100mA ratings and S-Mini3-compatible footprints if supply constraints exist.

UNR52AFG0LUNR52AFG0L
$0.03
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