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The UNR9111G0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device dissipates up to 125 mW of power and operates within a junction temperature range of -55°C to +125°C. Electrical characteristics include a forward current transfer ratio (hFE) minimum of 35 at IC = -5 mA and VCE = -10 V. The internal resistance configuration consists of R1 = 10 kΩ and R2 = 10 kΩ. Transition frequency is specified at 80 MHz under standard test conditions.
Verify the exact part number against official Panasonic Industry documentation before procurement. Confirm that the suffix '0L' aligns with the specific reel or packaging variant required for your assembly line. Check the manufacturer's website for the latest lifecycle status, as this series may be subject to maintenance or discontinuation phases.
Select this component when a compact PNP solution with fixed biasing is required for digital switching. Ensure the 10kΩ/10kΩ resistor ratio matches your circuit's drive requirements. Verify that the -50V rating and 100mA current capacity exceed your application's peak loads. Consider the thermal dissipation limits if operating near maximum ambient temperatures.
This component belongs to the UNR911xG series of pre-biased transistors from Panasonic Industry. The series offers various resistor combinations to suit different logic families. The UNR9111G0L specifically provides equal base and emitter resistors, distinguishing it from variants with asymmetric ratios like the UNR9114G or UNR9118G.
Publicly confirmed substitutes include PDTA114YM from Nexperia USA Inc., which serves as a similar alternative in the market.