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The UNR9112G0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F3 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. The device has a collector-emitter voltage (VCEO) of -50 V and a collector current (IC) of -100 mA. Total power dissipation is rated at 125 mW. The internal base resistor (R1) is 22 kΩ and the emitter resistor (R2) is 22 kΩ. The forward current transfer ratio (hFE) ranges from 60 to 400 at IC = -5 mA and VCE = -10 V. Transition frequency (fT) is 80 MHz.
Verify the specific ordering suffix against official Panasonic Industry documentation to confirm exact resistance values and packaging type. Confirm compliance requirements such as RoHS status directly with the manufacturer or authorized distributors before procurement. Check product lifecycle status on the official semiconductor website to ensure availability and long-term supply stability.
Select this component when a PNP transistor with integrated biasing is required for space-constrained digital designs. Ensure the 22 kΩ resistor configuration matches the circuit's drive requirements. Verify that the -50 V voltage rating and -100 mA current capacity are sufficient for the intended load conditions.
The UNR9112G0L belongs to the UNR911xG series of transistors with built-in resistors manufactured by Panasonic Industry. This series offers various resistor combinations tailored for different logic families and driving applications. The 'G' suffix typically indicates RoHS compliance, while '0L' specifies the tape-and-reel packaging format.
Publicly confirmed substitute part numbers for the UNR9112G0L were not found in the provided source material.