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The UNR9112J0L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F1 package (EIAJ SC-89) and complies with the RoHS Directive. Key electrical parameters include a collector-base voltage of -50 V, collector-emitter voltage of -50 V, and a maximum collector current of -100 mA. The total power dissipation is rated at 125 mW. For this specific part number, the internal base resistor R1 is 22 kΩ and the emitter resistor R2 is 22 kΩ. The forward current transfer ratio (hFE) ranges from 60 to 400 under standard test conditions.
Verify the exact ordering suffix against the manufacturer's official documentation to confirm the specific resistance values and packaging configuration. Confirm compliance status with current environmental directives such as RoHS before finalizing procurement specifications.
Select this component when a PNP transistor with pre-biased resistors is required for digital switching. Ensure the 22 kΩ resistor values match the design requirements. Verify that the -50 V voltage rating and 100 mA current capacity are sufficient for the target application load.
This device belongs to the UNR911xJ Series manufactured by Panasonic Electronic Components. The series offers various combinations of internal resistors to suit different digital circuit needs while maintaining a consistent small-outline footprint.
Consult the official datasheet for alternative part numbers within the UNR911xJ series that offer different resistor ratios or hFE ranges if the specific 22k/22k configuration is unavailable.
The UNR9112J contains two internal resistors: R1 (base resistor) is 22 kΩ and R2 (emitter resistor) is 22 kΩ.
The absolute maximum rating for the collector current (IC) is -100 mA at an ambient temperature of 25°C.
Yes, the product complies with the RoHS Directive (EU 2002/95/EC).