UNR9113G0L

Overview

The UNR9113G0L is a Silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F3 package with Pin 1 as Base, Pin 2 as Emitter, and Pin 3 as Collector. Absolute maximum ratings at Ta = 25°C include a collector-base voltage (V_CBO) of -50 V, collector-emitter voltage (V_CEO) of -50 V, collector current (I_C) of -100 mA, total power dissipation (P_T) of 125 mW, junction temperature (T_j) of 125 °C, and storage temperature (T_stg) from -55 to +125 °C. Electrical characteristics specify a collector-base cutoff current (I_CBO) of 0.1 µA max, collector-emitter cutoff current (I_CEO) of 0.5 µA max, and emitter-base cutoff current (I_EBO) of 0.1 mA max. The forward current transfer ratio (h_FE) ranges from 80 to 400 at V_CE = -10 V and I_C = -5 mA. Transition frequency (f_T) is 150 MHz at V_CB = -10 V and I_E = 1 mA. Internal resistance values are R1 = 47 kΩ and R2 = 47 kΩ.

Feature Summary

• Integrates dual bias resistors into a single compact component to reduce circuit board space and part count.
• Utilizes the SS-Mini3-F3 surface-mount package to facilitate automated insertion via tape packing.
• Complies with the RoHS Directive (EU 2002/95/EC) for environmental safety.

Applications

• Digital logic interface circuits
• Switching applications in consumer electronics
• Automotive grade electronic modules

Procurement Notes

Verify the specific ordering suffix '0L' against official Panasonic documentation to confirm packaging details such as reel quantity or tape specifications. Confirm the current lifecycle status directly with the manufacturer, as components may transition through planned maintenance or discontinued phases over time.

Selection Notes

Select this component when a PNP transistor requires integrated base and emitter biasing within a minimal footprint. Ensure the required resistor values match the standard 47 kΩ configuration provided by the UNR9113 variant. Verify that the operating voltage does not exceed the 50 V breakdown limits and that the thermal environment supports the specified power dissipation rating.

Part Context

This device belongs to the UNR911xG Series, which offers various combinations of internal bias resistors tailored for different digital switching requirements. All members share the same silicon PNP epitaxial planar structure and SS-Mini3-F3 package dimensions, differing only in their specific internal resistance configurations.

Replacement Considerations

Publicly confirmed substitute part numbers for this specific component are not available in the verified source material.