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The UNR9113J0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F1 package (SC-89). Key electrical parameters include a collector-emitter voltage of -50 V and a collector current of -100 mA. The integrated base resistor (R1) is 47 kΩ and the emitter resistor (R2) is 47 kΩ. The forward current transfer ratio (hFE) ranges from 80 to 400 at IC = -5 mA and VCE = -10 V. Transition frequency is 150 MHz. Total power dissipation is 125 mW.
Verify the specific suffix '0L' against the manufacturer's latest lifecycle status, as this series includes maintenance or discontinued variants. Confirm RoHS compliance documentation matches the production batch. Ensure the SS-Mini3-F1 footprint matches the target PCB design before ordering.
Select this part when a PNP transistor with equal 47 kΩ base and emitter resistors is required. Compare hFE and saturation voltage requirements against other UNR911xJ variants if different resistance ratios are needed. Verify that the 125 mW power dissipation rating meets the thermal constraints of the application.
This component belongs to the Panasonic UNR911xJ series of pre-biased transistors. The 'J' suffix indicates the inclusion of internal resistors, while '0L' typically denotes tape-and-reel packaging. Other variants in the series offer different resistor values such as 10 kΩ or 22 kΩ combinations.
Public confirmed substitute: None identified in verified sources.