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The UNR9114G0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ. Electrical characteristics include a minimum forward current transfer ratio (hFE) of 80 at IC = -5 mA and VCE = -10 V, and a transition frequency (fT) of 80 MHz. Total power dissipation is rated at 125 mW.
Verify the specific suffix G0L against the manufacturer's official documentation to confirm the exact resistance values and package variant. Confirm availability status as this series may be subject to discontinuation or lifecycle changes. Ensure compatibility with RoHS directives if required by the target application environment.
Select this component when a compact PNP pre-biased transistor is required for digital switching. Verify that the internal resistor ratio (R1/R2) matches the circuit design requirements. Compare hFE and saturation voltage specifications against load conditions to ensure adequate drive capability within the 125 mW power dissipation limit.
This part belongs to the Panasonic UNR911xG Series of transistors with built-in resistors. The series offers various resistor combinations tailored for different digital logic levels. The UNR9114G0L specifically provides a 10 kΩ base resistor and a 47 kΩ emitter resistor configuration.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult manufacturer cross-reference guides for equivalent components with matching electrical parameters and pin configurations.