UNR9114J0L

Overview

The UNR9114J0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device includes an internal base resistor (R1) of 10 kΩ and an emitter resistor (R2) of 47 kΩ. Electrical characteristics include a forward current transfer ratio (hFE) minimum of 80 at IC = -5 mA and VCE = -10 V, and a transition frequency (fT) of 80 MHz. The total power dissipation is rated at 125 mW.

Feature Summary

• Integrates two internal resistors to reduce component count and equipment size.
• Utilizes SS-Mini type package for automatic insertion via tape packing.

Applications

• Digital circuit switching
• Logic interface applications

Procurement Notes

Verify the exact suffix configuration against official Panasonic documentation before procurement. Confirm that the specific ordering code matches the required resistance values and package variant. Check current lifecycle status as components may be discontinued or in maintenance phases.

Selection Notes

Select this component when a PNP transistor with specific 10 kΩ base and 47 kΩ emitter resistors is required. Ensure the operating voltage does not exceed -50 V and the current remains within the -100 mA limit. Verify thermal requirements against the 125 mW dissipation rating.

Part Context

This part belongs to the UNR911xJ Series from Panasonic Industry. The series offers various combinations of integrated resistors for different logic levels. The 'J' suffix typically denotes the specific resistance combination and package type within this family.

Replacement Considerations

Public confirmed substitute: PDTA114YM,315 (Nexperia USA Inc.).