UNR9115G0L

Overview

The UNR9115G0L is a silicon PNP epitaxial planar transistor with a built-in bias resistor, designed for digital circuits. It features an SSMini3-F3 package with pin configurations of Base (1), Emitter (2), and Collector (3). The device has a collector-emitter voltage rating of -50 V and a continuous collector current of -100 mA. Total power dissipation is rated at 125 mW. The typical base resistance (R1) is 10 kΩ. Transition frequency is specified at 80 MHz.

Feature Summary

• Integrates a single pre-biased PNP transistor with a built-in base resistor to reduce component count and board space.
• Utilizes the compact SSMini3-F3 surface-mount package suitable for automated insertion via tape packing.

Applications

• Digital logic interface circuits
• Switching applications in consumer electronics
• Signal level translation

Procurement Notes

Verify the exact part number against official Panasonic Industry documentation before procurement. Confirm that the SSMini3-F3 package matches your PCB footprint requirements. Check the latest lifecycle status directly from the manufacturer, as availability may vary by region and distribution channel.

Selection Notes

Select this component when a compact PNP switching solution with integrated biasing is required. Ensure the circuit operates within the -50 V collector-emitter voltage limit and does not exceed the 125 mW total power dissipation rating under maximum ambient temperature conditions.

Part Context

This component belongs to the UNR911xG series of transistors with built-in resistors manufactured by Panasonic Industry. The series offers various resistance combinations for different digital driving requirements while maintaining a standardized small outline package format for consistent manufacturing integration.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.