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The UNR9116G0L is a silicon PNP epitaxial planar transistor with a built-in bias resistor, designed for digital circuits. It features an SS-Mini3-F3 package with three pins: Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device has a maximum collector-emitter voltage of -50 V and a maximum collector current of -100 mA. Total power dissipation is rated at 125 mW. The internal connection includes a single base resistor (R1) with a nominal value of 4.7 kΩ. Forward current transfer ratio (hFE) ranges from 160 to 460 under standard conditions.
Verify the specific ordering suffix '0L' against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the component matches the RoHS Directive requirements specified in the datasheet. Cross-reference the part number with the latest Panasonic semiconductor lifecycle information to confirm availability and production status before procurement.
Select this component when a compact PNP switching solution with integrated base biasing is required. The 4.7 kΩ internal resistor simplifies circuit design by eliminating external biasing components. Consider the -50 V voltage rating and 125 mW power dissipation limits when designing for thermal management and electrical stress in digital environments.
This component belongs to the UNR911xG series of composite devices manufactured by Panasonic Electronic Components. The series offers various resistance configurations to suit different digital circuit requirements. The UNR9116G0L specifically provides a 4.7 kΩ base resistor configuration within the SS-Mini package format.
Consult the official Panasonic replacement guide or datasheet for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' pre-biased transistors without verifying pinout, electrical ratings, and package dimensions.