SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The UNR9117G0L is a silicon PNP epitaxial planar transistor with a built-in bias resistor, designed for digital circuits. It features an SS-Mini3-F3 package and operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The component dissipates up to 125 mW at 25°C ambient temperature. It includes a single base resistor (R1) of 22 kΩ. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 at -5 mA collector current, and a transition frequency (fT) of 80 MHz.
Verify the specific ordering suffix G0L against the manufacturer's latest lifecycle status, as availability may vary. Confirm that the 22 kΩ internal resistance matches the design requirements before finalizing procurement. Ensure compliance with RoHS directives if required by the end application standards.
Select this component when a PNP transistor with a fixed 22 kΩ base resistor is needed for digital switching. Compare hFE ranges and saturation voltages against load requirements. Consider the SS-Mini3-F3 footprint constraints during PCB layout. Verify thermal dissipation limits under actual operating conditions.
The UNR9117G0L belongs to the Panasonic UNR911xG series of pre-biased transistors. This series offers various resistor configurations to simplify digital circuit designs. The 'G' indicates RoHS compliance, while '0L' specifies the tape-and-reel packaging format for automated assembly processes.
Direct substitutes within the same series include other UNR911xG variants with different resistor values. Cross-reference pinouts and electrical ratings carefully when considering alternatives from other manufacturers to ensure compatibility with existing digital circuit designs.