UNR9119G0L

Overview

The UNR9119G0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SSMini3-F3 package with pin configurations of Base (Pin 1), Emitter (Pin 2), and Collector (Pin 3). The device supports a maximum collector current of 100 mA and a collector-emitter voltage of -50 V. Internal resistance values are R1 = 1 kΩ and R2 = 10 kΩ. Key electrical characteristics include a forward current transfer ratio (hFE) minimum of 30 at IC = -5 mA and VCE = -10 V, a transition frequency (fT) of 80 MHz, and a total power dissipation of 125 mW.

Feature Summary

• Integrates dual bias resistors to reduce component count and equipment size.
• Utilizes the SSMini3-F3 surface mount package for automated insertion.

Applications

• Digital logic interface circuits
• Switching applications in compact electronic devices

Procurement Notes

Verify the specific suffix G0L against official Panasonic Industry documentation to confirm resistor values and package type. Confirm lifecycle status as discontinued or maintenance planned via manufacturer channels before procurement planning.

Selection Notes

Select this component when a PNP pre-biased transistor with a 1 kΩ base resistor and 10 kΩ emitter resistor is required. Ensure the design accommodates the -50 V collector-emitter voltage rating and 100 mA current limit within the specified thermal constraints.

Part Context

This part belongs to the UNR911xG Series of composite devices manufactured by Panasonic Industry. The series provides various combinations of integrated bias resistors tailored for different digital circuit requirements while maintaining a consistent small outline package form factor.

Replacement Considerations

Public confirmed substitute: PDTA114YM,315 (Nexperia USA Inc.). Verify pinout compatibility and electrical parameter alignment before substitution.