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The UNR9119J0L is a Silicon PNP epitaxial planar transistor with built-in resistors, designed for digital circuits. It features a maximum collector-emitter voltage of -50 V and a continuous collector current of -100 mA. The device dissipates up to 125 mW of power within a junction temperature range of -55°C to +125°C. Internal biasing includes a base resistor (R1) of 1 kΩ and an emitter resistor (R2) of 10 kΩ. The transition frequency is rated at 80 MHz, with a typical forward current transfer ratio of 30.
Verify the exact ordering suffix against official Panasonic documentation before procurement. Confirm that the specific suffix matches the required internal resistance values and package variant. Ensure compliance with RoHS directives applicable to your region. Check for any maintenance or discontinuation notices on the manufacturer's website prior to finalizing orders.
Select this component when a compact PNP transistor with fixed biasing is required for digital logic applications. Verify that the integrated 1 kΩ base and 10 kΩ emitter resistors align with the target circuit design. Consider the 80 MHz transition frequency for high-speed switching requirements. Ensure the operating voltage does not exceed the -50 V collector-emitter rating.
This part belongs to the UNR911xJ series from Panasonic Electronic Components. The series comprises various PNP transistors with different internal resistor configurations. The '0L' suffix typically denotes a specific tape-and-reel packaging format intended for automated surface-mount assembly processes.
Nexperia USA Inc. PDTA144VM,315 is listed as a similar replacement option.
The UNR9119J contains a base resistor (R1) of 1 kΩ and an emitter resistor (R2) of 10 kΩ.
The maximum collector-emitter voltage (VCEO) is -50 V.
Yes, it has a transition frequency (fT) of 80 MHz, making it suitable for many digital switching applications.