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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SSMINI3
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- Resistors Included：R1 Only
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：80 MHz
- Power - Max：125 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：SSMini3-F3
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Overview
The UNR911BG0L is a silicon PNP epitaxial planar transistor with a built-in resistor, designed for digital circuits. It features a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device includes an integrated base resistor (R1) of 100 kΩ. Key electrical characteristics include a forward current transfer ratio (hFE) ranging from 160 to 460 at IC = -5 mA and VCE = -10 V. The transition frequency is specified at 80 MHz under standard test conditions. Total power dissipation is rated at 125 mW, with a junction temperature limit of 125 °C.
Feature Summary
- Integrates a single PNP transistor with a fixed 100 kΩ base resistor to reduce component count and board space.
- Utilizes the SS-Mini3-F3 surface-mount package to facilitate automated insertion and compact design.
- Complies with the RoHS Directive (EU 2002/95/EC) for environmental safety.
Applications
- Digital logic interface circuits
- Switching applications in consumer electronics
- Driver stages for low-power digital loads
Procurement Notes
Verify the exact part number against manufacturer documentation before procurement. Confirm that the ordering suffix corresponds to the specific resistance value and packaging format required for your design. Check the official Panasonic Industry website for the latest lifecycle status, as this component may be subject to maintenance or discontinuation phases.
Selection Notes
Select this component when a pre-biased PNP transistor with a high-value base resistor is needed for digital switching. Ensure the circuit operates within the -50 V collector-emitter voltage and -100 mA current limits. Verify that the 100 kΩ internal resistance provides the appropriate bias current for your specific load requirements.
Part Context
This device belongs to the UNR911xG Series, which offers various combinations of transistors and built-in resistors. The 'B' designation specifically indicates the 100 kΩ base resistor configuration. Other series members provide different resistance values to suit diverse biasing needs in compact digital designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official replacement guide or contact technical support for verified alternatives if this component is discontinued.
FAQ
What is the value of the built-in resistor in the UNR911BG0L?
The UNR911BG0L contains a single built-in base resistor (R1) with a nominal value of 100 kΩ.
What is the maximum collector current rating?
The absolute maximum rating for the collector current (IC) is -100 mA.
Is this component compliant with RoHS standards?
Yes, the UNR911xG Series complies with the RoHS Directive (EU 2002/95/EC).
