UNR911FG0L

Overview

The UNR911FG0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F3 package with pin configuration of Base (1), Emitter (2), and Collector (3). The device supports a maximum collector current of 100 mA and a collector-emitter voltage of -50 V. Internal resistance values are R1 = 4.7 kΩ and R2 = 10 kΩ. Electrical characteristics include a forward current transfer ratio (hFE) minimum of 30 at IC = -5 mA and VCE = -10 V, and a transition frequency (fT) of 80 MHz.

Feature Summary

• Integrates two bias resistors to reduce component count and board space
• Utilizes SS-Mini3-F3 surface mount package for automated insertion
• Designed specifically for digital circuit applications

Applications

• Digital logic interface circuits
• Switching applications in compact electronic devices
• Biasing networks for single-transistor configurations

Procurement Notes

Verify the specific suffix G0L against official Panasonic Industry documentation to confirm resistor values and electrical parameters. Confirm availability status as lifecycle stages may change. Ensure compatibility with RoHS Directive requirements if applicable to the target assembly process.

Selection Notes

Select this component when a PNP transistor with integrated biasing is required for digital switching. Compare internal resistance ratios against other UNR911xG variants to match specific drive requirements. Verify that the 100 mA collector current and 50 V voltage ratings exceed the application's maximum operating conditions.

Part Context

This part belongs to the UNR911xG series of composite devices manufactured by Panasonic Industry. The series offers various combinations of internal resistors to suit different digital circuit needs while maintaining a consistent small outline package form factor.

Replacement Considerations

Public confirmed substitute: PDTA114YM,315 (Nexperia USA Inc.). Verify pinout and electrical characteristics before substitution.