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The UNR911FJ0L is a silicon PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F1 package and supports automatic insertion via tape packing. Key electrical parameters include a collector-emitter voltage of -50 V, a collector current of -100 mA, and a total power dissipation of 125 mW. The device incorporates a base resistor (R1) of 4.7 kΩ and an emitter resistor (R2) of 10 kΩ. It exhibits a forward current transfer ratio (hFE) of 30 at IC = -5 mA and VCE = -10 V, with a transition frequency of 80 MHz.
Verify the specific suffix '0L' against official Panasonic documentation to confirm packaging details and lifecycle status. Confirm RoHS compliance requirements for your application. Check for discontinued status updates on the manufacturer's website before finalizing procurement plans.
Select this component when a compact PNP pre-biased transistor is required for digital logic interfacing. Ensure the integrated resistance values of 4.7 kΩ and 10 kΩ match the circuit design specifications. Verify that the -50 V voltage rating and -100 mA current capacity are sufficient for the intended load conditions.
The UNR911FJ0L belongs to the UNR911xJ series of composite devices manufactured by Panasonic Industry. These components combine a single PNP transistor with internal biasing resistors in a small outline package. The series is specifically engineered to simplify circuit designs by minimizing the number of discrete parts needed for transistor biasing.
Public confirmed substitute part numbers: PDTA144VM,315 (Nexperia USA Inc.).