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The UNR911HJ0L is a PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SS-Mini3-F1 package and operates with a collector-emitter voltage of -50 V and a maximum collector current of -100 mA. The device dissipates up to 125 mW at 25°C. Internal resistances are R1 = 2.2 kΩ and R2 = 10 kΩ. The forward current transfer ratio (hFE) ranges from 30 to 400, with a transition frequency of 80 MHz. Collector-emitter saturation voltage is typically -0.25 V.
Verify the specific suffix '0L' against the manufacturer's official documentation to confirm packaging details and lifecycle status. Confirm RoHS compliance requirements match the project specifications before finalizing procurement orders.
Select this component when a PNP transistor with a 2.2 kΩ base resistor and 10 kΩ emitter resistor is required. Ensure the circuit design accommodates the specified hFE range and saturation voltage characteristics for reliable switching performance.
This part belongs to the UNR911xJ series of pre-biased transistors manufactured by Panasonic Industry. The series offers various resistance combinations tailored for different digital circuit driving requirements within a standardized small outline package format.
Consult the UNR911xJ series datasheet for alternative part numbers with matching resistance ratios. Verify pinout compatibility and electrical ratings before substituting with other manufacturers' pre-biased transistors.
The UNR911HJ0L contains a base resistor (R1) of 2.2 kΩ and an emitter resistor (R2) of 10 kΩ.
The total power dissipation is rated at 125 mW at an ambient temperature of 25°C.
Yes, the product complies with the RoHS Directive (EU 2002/95/EC).