UNR911LG0L

Overview

The UNR911LG0L is a PNP epitaxial planar transistor with built-in bias resistors, designed for digital circuits. It features an SSMini3-F3 package with pin configuration of Base (1), Emitter (2), and Collector (3). Key electrical parameters include a collector-emitter voltage of -50 V, collector current of -100 mA, and total power dissipation of 125 mW at 25°C. The forward current transfer ratio (hFE) ranges from 6 to 20, with a transition frequency of 80 MHz. Internal resistances are R1 = 4.7 kΩ and R2 = 4.7 kΩ.

Feature Summary

• Integrates two bias resistors to reduce component count and equipment size.
• Utilizes an SSMini3 surface-mount package suitable for automatic insertion via tape packing.

Applications

• Digital logic interface circuits
• Switching applications in compact electronic devices

Procurement Notes

Verify the specific suffix '0L' against official Panasonic documentation to confirm packaging details and lifecycle status. Confirm RoHS compliance requirements match project specifications. Check for alternative packages if lead-free soldering processes differ from standard JEDEC profiles.

Selection Notes

Select this component when a PNP pre-biased transistor with equal base and emitter resistance values is required. Ensure the circuit operates within the -50 V collector-emitter voltage limit and -100 mA current rating. Verify that the 125 mW power dissipation capability meets thermal constraints at the intended ambient temperature.

Part Context

This device belongs to the UNR911xG series of composite transistors with built-in resistors. The series offers various resistor combinations to suit different drive requirements. The UNR911LG0L specifically provides matched 4.7 kΩ resistors for balanced biasing in digital switching applications.

Replacement Considerations

Consult the official Panasonic replacement list for discontinued items. Verify equivalent part numbers based on matching hFE ranges, resistance values, and package dimensions before substitution.